View FDS6990_928686.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDS6990S
May 2001
FDS6990S
Dual 30V N-Channel PowerTrench(R) SyncFET TM
General Description
The FDS6990S is designed to replace a dual SO-8 MOSFET and two Schottky diodes in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild's monolithic SyncFET technology. The performance of the FDS6990S as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
Features
* 7.5A, 30 V. RDS(ON) = 22 m @ VGS = 10 V RDS(ON) = 30 m @ VGS = 4.5 V * * * Includes SyncFET Schottky diode Low gate charge (11 nC typical) High performance trench technology for extremely low RDS(ON) * High power and current handling capability
Applications
* DC/DC converter * Motor drives
D2 D
DD2
DD1 D1 D
5
Q1
4 3 2
Q2
6 7
G1
SO-8
Pin 1 SO-8
S1 G G2 S S2 S S
8
1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
T A =25 oC unless otherwise noted
Parameter
Ratings
30 20
(Note 1a)
Units
V V A W
7.5 20 2
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
1.6 1 0.9 -55 to +150 C
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6990S
(c)2001 Fairchild Semiconductor Corporation
Device FDS6990S
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS6990S Rev B(W)
FDS6990S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR
T A = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 1 mA, Referenced to 25C VDS = 24 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V
Min
30
Typ
Max
Units
V
Off Characteristics
23 500 100 -100 mV/C A nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS, ID = 1 mA ID = 1 mA, Referenced to 25C VGS = VGS = VGS = VGS = 10 V, ID = 7.5 A 10 V, ID = 7.5 A, TJ =125C 4.5 V, ID = 6.5 A 10 V, VDS = 5 V ID = 10 A
1
2.2 -6 17.5 27 24
3
V mV/C
22 35 30
m
ID(on) gFS
20 22
A S
VDS = 15 V,
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
1233 344 106
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
8 5 25 11
16 10 40 20 16
ns ns ns ns nC nC nC
VDS = 15 V, VGS = 5 V
ID = 10 A,
11 5 4
Drain-Source Diode Characteristics and Maximum Ratings
IS VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.9 A Voltage Diode Reverse Recovery Time IF = 10A diF/dt = 300 A/s Diode Reverse Recovery Charge 2.9
(Note 2)
A V nS nC
0.5 17
0.7
(Note 3)
12.5
Notes: 1. RJA is the sum of the junction-to-case and case -to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 0.5in 2 pad of 2 oz copper
b)
125C/W when mounted on a 0.02 in 2 pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
VGS = 10V I D, DRAIN CURRENT (A) 40
6.0V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
50 5.0V 4.5V
2.6 VGS = 4.0V 2.2
30 4.0V 20
1.8
4.5V 5.0V
1.4 6.0V 8.0V 1 10V
10
3.5V
0 0 1 2 3 VDS, DRAIN-SOURCE VOLTAGE (V)
0.6 0 10 20 30 40 50 I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.06 R DS(ON), ON-RESISTANCE (OHM)
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.9 ID = 7.5A VGS = 10V 1.6
I D = 3.8A 0.05
0.04
o
1.3
0.03
T A = 125 C
1
0.02 TA = 25 C 0.01
o
0.7
0.4 -50
-25
0
25
50
75
100
o
125
150
0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
I S, REVERSE DRAIN CURRENT (A) 50 VDS = 5V ID , DRAIN CURRENT (A) 40 125 C 30
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V
TA = -55 C
o
25 C
o
1
TA = 125 C 25 C
o
o
0.1
-55 C
o
20
0.01
10
0 1.5
0.001 2.5 3.5 4.5 5.5 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 10A 8 VDS = 5V 15V 10V CAPACITANCE (pF)
2000 f = 1MHz VGS = 0 V 1600 CISS 1200
6
4
800 COSS 400 CRSS
2
0 0 3 6 9 12 15 18 21 Qg , GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W) 100 RDS(ON) LIMIT ID , DRAIN CURRENT (A) 100s 10 1ms 10ms 100ms 1s 1 DC VGS = 10V SINGLE PULSE o RJA = 135 C/W T A = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
o
Figure 8. Capacitance Characteristics.
50 SINGLE PULSE RJA = 135C/W T A = 25C
40
30
10s
20
0.1
10
0 0.001
0.01
0.1
1 t1 , TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) + R JA R JA = 135 C/W P(pk) t1 t2 T J - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t 1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6990S Rev B (W)
FDS6990S
Typical Characteristics
(continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6990S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
0.1 125 C 0.01
o
0.001
3A/div
0.0001
25 C
o
0V
0.00001 0 10 20 30
VDS, REVERSE VOLTAGE (V)
10ns/div
Figure 12. FDS6990S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6990A).
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature.
3A/div
0V
10ns/div
Figure 13. Non-SyncFET (FDS6990A) body diode reverse recovery characteristic.
FDS6990S Rev B (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM StealthTM
SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H2

▲Up To Search▲

Price & Availability of FDS6990

	To Download FDS6990 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .